過去の実績

GaN HEMT背面プロセス

“Elimination of pillar associated with micropipe of SiC in high-rate inductively coupled plasma etching”, 

N. Okamoto:

 J. Vac. Sci. Tech. A27 (2009) 295. DOI: https://doi.org/10.1116/1.3077297

“Differential etching behavior between semi-insulating and n-doped 4H-SiC in high-density SF6/O2 inductively coupled plasma”, 

N. Okamoto: 

J. Vac. Sci. Tech. A27 (2009) 456. DOI: https://doi.org/10.1116/1.3100215

“Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma”, 

N. Okamoto, A. Takahashi, Y. Minoura, Y. Kumazaki, S. Ozaki, T. Ohki, N. Hara and K. Watanabe: 

J. Vac. Sci. Technol. A 38, 063003 (2020). DOI: https://doi.org/10.1116/6.0000526

“GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers”, 

N. Okamoto, A. Takahashi, Y. Minoura, Y. Kumazaki, S. Ozaki, J. Kotani, T. Ohki, N. Kurahashi, M. Sato, N. Hara and K. Watanabe: 

2021 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH2021), 6.1, May 24 - 27, 2021, Virtual. Online: https://csmantech.org/digests/

GaN HEMT熱設計

 “Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding”, 

N. Okamoto, Y. Minoura, M. Sato, T. Ohki, S. Ozaki, K. Makiyama, A. Yamada, J. Kotani, K. Joshin and N. Nakamura: 

2018 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH2018), May 7-10, Austin, Texas, USA. Online: https://csmantech.org/digests/

“Thermal Design of GaN-on-GaN HEMT Power Amplifier for Selective Heating Microwave Oven”, 

Naoya Okamoto, Masaru Sato, Masato Nishimori, Yusuke Kumazaki, Toshihiro Ohki, Naoki Hara, and Keiji Watanabe: 

IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 11, No. 11, (2021) 1909. DOI: https://doi.org/10.1109/TCPMT.2021.3116616

化合物半導体デバイス・プロセス

“Surface Passivation of InGaP/InGaAs/GaAs Pseudomorphic HEMT’s with Ultrathin GaS film”, 

N. Okamoto, N. Hara and H. Tanaka: 

IEEE Trans. Electron Devices 47 (2000) 2284. DOI: https://doi.org/10.1109/16.887009

“Suppression of drain conductance dispersion in InP based HEMTs for broadband optical communication systems”, 

N. Okamoto, T. Takahashi, K. Imanashi, K. Sawada, and N. Hara: 

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), Washington, DC, USA, 2001 (IEDM2001), pp. 9.1.1-9.1.4. DOI: https://doi.org/10.1109/IEDM.2001.979463

“Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion”, 

T. Kikkawa, M. Nagahara, N. Okamoto, Y. Tateno, Y. Yamaguchi, N. Hara, K. Joshin, and P. M. Asbeck: 

International Electron Devices Meeting. Technical Digest, Washington, DC, USA, 2001 (IEDM2001), pp. 25.4.1-25.4.4 DOI: https://doi.org/10.1109/IEDM.2001.979574

“Improvement in Reliability of InP-based HEMTs by Suppressing Impact Ionization”, 

N. Hara, N. Okamoto, K. Imanishi, K. Sawada, T. Takahashi, K. Makiyama and M. Takikawa: 

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004., Kagoshima, Japan, 2004 (IPRM2004), pp. 615-618. DOI: https://doi.org/10.1109/ICIPRM.2004.1442800

化合物半導体結晶成長

"Gas Source Molecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source", 

N. Okamoto, H. Ando, A. Sandhu and T. Fujii: 

1991 International Conference on Solid State Devices and Materials, Pacifico Yokohama, Yokohama, Japan (SSDM 1991). 

Jpn. J. Appl. Phys. 30 (1991) 3792. DOI: https://doi.org/10.1143/JJAP.30.3792

“MOCVD-grown InGaN-channel HEMT structures with electron mobility of over 1000cm2/Vs”, 

N. Okamoto, K. Hoshino, N. Hara, M. Takikawa and Y. Arakawa: 

12th International Conference on Metal Organic Vapor Phase Epitaxy, Lahaina, Maui, Hawaii (ICMOVPE-XII). 

J. Crystal Growth vol. 272 (2004) pp. 278-284. DOI: https://doi.org/10.1016/j.jcrysgro.2004.08.071

サブテラヘルツ設計

“A Waveguide Antenna Array Module with Controlled Element Pitch < 1λ for Sub-THz Communications”, 

Shiro Ozaki, Naoya Okamoto, Takuichi Hirano, Yasuhiro Nakasha, Yusuke Kumazaki, Toshihiro Ohki, Naoki Hara: 

2023 IEEE Conference on Antenna Measurements and Applications (CAMA), Genoa, Italy, 2023, pp. 281-284. DOI: https://doi.org/10.1109/CAMA57522.2023.10352797

GaN-on-GaN HEMT（環境省プロジェクト）

“Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates”, 

Y. Kumazaki, T. Ohki, J. Kotani, S. Ozaki, Y. Niida, K. Makiyama, Y. Minoura, N. Okamoto, N. Nakamura, and K. Watanabe: 

2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS2019), 10b2, November 3 - 6, 2019, Nashville, TN, USA. DOI: https://doi.org/10.1109/BCICTS45179.2019.8972742

（JSAP Young Scientist Award）“Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates”,

Y. Kumazaki, T. Ohki, J. Kotani, S. Ozaki, Y. Niida, Y. Minoura, M. Nishimori, N. Okamoto, M. Sato, N. Nakamura and K. Watanabe: 

Applied Physics Express 14, 016502 (2021). DOI: https://doi.org/10.35848/1882-0786/abc1cc

“Promising Results of national project by Japanese Ministry of the Environment to develop GaN on GaN power devices and prove their usefulness in real systems”, 

Yohei Otoki, Masatomo Shibata, Yusuke Mori, Masayuki Imanishi, Satoshi Tamura, Kazunori Kidera, Junichi Takino, Yoshio Okayama, Keiji Watanabe, Naoya Okamoto, Yoshio Honda, Masayoshi Yamamoto, Koji Shiozaki and Hiroshi Amano: 

2022 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH2022), 14.1, May 9 - 12, 2022, Monterey Marriott & Monterey Conference Center Monterey, California, USA. Online: https://csmantech.org/digests/

GaN HEMTプロセス

(Best paper award) “Effect of ALD Method on Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs”, 

S. Ozaki, T. Ohki, M. Kanamura, N. Okamoto and T. Kikkawa: 

5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPLASMA2013), Japanese Journal of Applied Physics 52 (2013) 11NG04. DOI: https://doi.org/10.7567/JJAP.52.11NG04

(Best poster award) “Reduction in Current Collapse of AlGaN/GaN HEMTs Using MSQ-Based Low-k Insulator Films”, 

S. Ozaki, K. Makiyama, T. Ohki, Y. Kamada, M. Sato, Y. Niida, N. Okamoto, S. Masuda and K Joshin: 

2014 International Workshop Nitride Semiconductor (IWN2014), Physica Status Solidi (a) Volume 212, Issue 5 May 2015 Pages 1153–1157. DOI: https://doi.org/10.1002/pssa.201431665

(He Bong Kim Best Paper Honorable Mention award) “Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric”, 

S. Ozaki., K. Makiyama, T. Ohki, Y. Kamada, M. Sato, Y. Niida, N. Okamoto and K. Joshin: 

2016 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH2016), Miami, Florida, USA., Online: https://csmantech.org/digests/

IEEE Transactions on Semiconductor Manufacturing 29, (2016) 370-375.

DOI: https://doi.org/10.1109/TSM.2016.2599184

“Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits”, 

Motonobu Sato, Y. Kobayashi, Y. Niida, K. Saito, N. Kurahashi, A. Okano, Y. Ito, T. Kurahashi, S. Iijima, Y. Nakata, M. Sato, and N. Okamoto: 

2017 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH2017), Indian Wells, California, USA, May 22-25, 2017. Online: https://csmantech.org/digests/

IEEE Transactions on Semiconductor Manufacturing, Vol. 30, No. 4, November 2017, page 450.

DOI: https://doi.org/10.1109/TSM.2017.2756823

GaN HEMTデバイス

“Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz”, 

K. Makiyama, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, Y. Niida, Y. Kamada, K. Joshin, K. Watanabe, Y. Miyamoto: 

2015 IEEE International Electron Devices Meeting (IEDM2015), Pages: 9.1.1 - 9.1.4. DOI: https://doi.org/10.1109/IEDM.2015.7409659

“3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier”, 

Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, Y. Minoura, N. Okamoto, M. Sato, K. Joshin, K. Watanabe: 

2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR2016), 24-27 January 2016, Austin, Texas, USA. DOI: https://doi.org/10.1109/PAWR.2016.7440153

“An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader”, 

T. Ohki, A. Yamada, Y. Minoura, K. Makiyama, J. Kotani, S. Ozaki, M. Sato, N. Okamoto, K. Joshin, N. Nakamura: 

IEEE Electron Device Letters 40 (2019) 287-290. DOI: https://doi.org/10.1109/LED.2018.2884918

ナノワイヤ環境電波発電（CREST）

“Demonstration of GaAsSb/InAs Nanowire Backward Diodes Grown using Position-defined VLS Method”, 

K. Kawaguchi, T. Takahashi, N. Okamoto, and M. Sato: 

Applied Physics Express 11, 025001 (2018). DOI: https://doi.org/10.7567/APEX.11.025001

“Log-spiral Antenna Integrated with GaAsSb-base Backward Diodes for Microwave Energy Harvesting”, 

M. Sato, K. Kawaguchi, T. Takahashi, N. Okamoto, T. Kurosawa, X. Liu, S. Yamashita, and M. Suhara: 

IEEE MTT-S 2019 International Microwave Symposium (IMS2019), 2-7 June 2019, Boston, Massachusetts, USA. DOI: https://doi.org/10.1109/MWSYM.2019.8700751

“Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves”, 

T. Takahashi, K. Kawaguchi, M. Sato, M. Suhara, and N. Okamoto: 

49th European Solid-State Device Research Conference (ESSDERC2019), September, 23-26, 2019, Cracow, Poland. DOI: https://doi.org/10.1109/ESSDERC.2019.8901802

“GaN RF HEMTs: Powering ahead with native substrates”, 

Naoya Okamoto and Yusuke Kumazaki: 

Compound Semiconductor Magazine, volume 28, issue I, (2022) p.44-48. Online: https://compoundsemiconductor.net/magazine

“Obliterating the thermal barrier in GaN-on-GaN devices”

Naoya Okamoto:

Compound Semiconductor Magazine, volume 25, issue 7, October, 2019, p32-38. Online: https://compoundsemiconductor.net/magazine

" GaAs Surface Passivation with Molecular Beam Epitaxy grown GaS Film（分子線エピタキシー成長GaS膜によるGaAs表面パッシベーションに関する研究）"

岡本直哉

https://hdl.handle.net/11094/43165